Abstract
This paper presents a complete 90nm CMOS technology platform dedicated to advanced SoC manufacturing, featuring 16 Å EOT-70nm transistors (standard process) or 21 -90nm transistors (Low Power process) as well as 2.5 or 3.3V I/O transistors, copper interconnects and SiOC low-k IMD (k=2.9). The main critical process steps are described and electrical results are discussed. Moreover, using advanced lithographic tools, fully functional 1Mbit SRAM instances, based on a highly manufacturable 6T 1.36?m? memory cell, have been processed. The cell is detailed and its features, both electrical and morphological, are discussed.