| Abstract |
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This study examines the effect of crosstalk on the operations of DRAMs that are implemented in deep submicron technology, 0.18 µm. An extensive simulation revealed that the coupling between word lines and between bit lines alter the cell contents during reading and writing operations as well as retention of the different cells The effect is more likely when the poly instead of aluminum is used. Coupling between bit and word lines did not have such serious outcome.
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 Additional Information
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Index Terms- Crosstalk, DRAM, Noise, and Submicron
Citation:
Zemo Yang, Samiha Mourad,
"Crosstalk in Deep Submicron DRAMs,"
mtdt,
p. 125,
2000 IEEE International Workshop on Memory Technology, Design and Testing (MTDT'00),
2000
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