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Published Articles >> Table of Contents >> Abstract
5th International Symposium on Quality Electronic Design (ISQED'04)
pp. 45-50
A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach
Jin He, University of California at Berkeley
Xuemei Xi, University of California at Berkeley
Mansun Chan, Hong Kong University of Science and Technology
Chung-Hsun Lin, University of California at Berkeley
Ali Niknejad, University of California at Berkeley
Chenming Hu, University of California at Berkeley
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DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/ISQED.2004.1283648
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| Abstract |
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A non-charge-sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this paper using the SPP approach. The essential difference of the present theory compared with the previous lies in that the Poisson equation is solved in the term of the electron concentration rather than the term of the surface potential. This solution formulates electrical field, surface potential in inversion charge term rather than the surface potential. Thus, a non-charge-sheet-based analytical solution of inversion charge is obtained directly replacing solution of transcendent equation groups of the surface potential. The obtained inversion charge relation then serves to develop a non-charge-sheet-based analytical theory for undoped symmetric double-gate MOSFETs from Pao-Sah current formulation. The formulated model has an analytic form that does not need to solve for the transcendent equation as in the conventional surface potentials or Pao-Sah formulation. The validity of the model has also been demonstrated by extensive comparison with AMD double-gate MOSFET’s data
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Citation:
Jin He, Xuemei Xi, Mansun Chan, Chung-Hsun Lin, Ali Niknejad, Chenming Hu,
"A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach,"
isqed,
pp. 45-50,
5th International Symposium on Quality Electronic Design (ISQED'04),
2004
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