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Design, Automation and Test in Europe Conference and Exhibition Designers’ Forum (DATE'04)   p. 30022
Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology
Yiming Chen, IBM Microelectronics Division
Xiaojuen Yuan, IBM Microelectronics Division
David Scagnelli, IBM Microelectronics Division BTV
James Mecke, IBM Microelectronics Division
Jeff Gross, IBM Microelectronics Division BTV
David Harame, IBM Microelectronics Division BTV

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DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/DATE.2004.1269193
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Abstract
A 1.5GHz-2.0GHz Low Noise Amplifier (LNA) is designed in IBM 0.18um BiCMOS technology using IBM design kits in Cadence Design Flow. The fabricated LNA chip is packaged and tested. The measured results (gain, noise figure, and IIP3) correlate with the simulation very well. The results demonstrate that IBM SiGe technology, Modeling, Design Kits and the Cadence design flow are solid and accurate for RFIC design.
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Citation:  Yiming Chen, Xiaojuen Yuan, David Scagnelli, James Mecke, Jeff Gross, David Harame, "Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology," date, p. 30022,  Design, Automation and Test in Europe Conference and Exhibition Designers’ Forum (DATE'04),  2004